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Enhanced light extraction efficiency of Eu-related emission from a nano-patterned GaN layer grown by MOCVD
Eu-doped GaN is a promising material for the active layer in red light emitting diodes. Although the output power of LEDs based on GaN:Eu has been increasing by a combination of structural and growth optimizations, there is still a significant limitation resulting from a poor light extraction effici...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6414605/ https://www.ncbi.nlm.nih.gov/pubmed/30862946 http://dx.doi.org/10.1038/s41598-019-40971-2 |