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Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications
Based on recent works, the most desirable high-temperature thermoelectric material would be highly-doped Si(1−x)Ge(x) crystals or films with sufficiently high Ge concentrations so that simultaneous enhancing the power factor and wave-engineering of phonons could be possible on the ballistic thermal...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6416246/ https://www.ncbi.nlm.nih.gov/pubmed/30867457 http://dx.doi.org/10.1038/s41598-019-39786-y |