Performance comparison of III–V//Si and III–V//InGaAs multi-junction solar cells fabricated by the combination of mechanical stacking and wire bonding

The integration of III–V and Si multi-junction solar cells as photovoltaic devices has been studied in order to achieve high photovoltaic conversion efficiency. However, large differences in the coefficients of thermal expansion and the lattice parameters of GaAs, Si, and InGaAs have made it difficu...

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Detalles Bibliográficos
Autores principales: Kao, Yu-Cheng, Chou, Hao-Ming, Hsu, Shun-Chieh, Lin, Albert, Lin, Chien-Chung, Shih, Zun-Hao, Chang, Chun-Ling, Hong, Hwen-Fen, Horng, Ray-Hua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6416321/
https://www.ncbi.nlm.nih.gov/pubmed/30867491
http://dx.doi.org/10.1038/s41598-019-40727-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6416321/
https://www.ncbi.nlm.nih.gov/pubmed/30867491
http://dx.doi.org/10.1038/s41598-019-40727-y

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