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Performance comparison of III–V//Si and III–V//InGaAs multi-junction solar cells fabricated by the combination of mechanical stacking and wire bonding
The integration of III–V and Si multi-junction solar cells as photovoltaic devices has been studied in order to achieve high photovoltaic conversion efficiency. However, large differences in the coefficients of thermal expansion and the lattice parameters of GaAs, Si, and InGaAs have made it difficu...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6416321/ https://www.ncbi.nlm.nih.gov/pubmed/30867491 http://dx.doi.org/10.1038/s41598-019-40727-y |