Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes

GaAsBi is a suitable and very attractive material system to be used as an active layer in laser diodes (LDs). To understand the performance and the reliability of such devices and also for further laser diode improvements, the origin of noise sources should be clarified. A detailed study of near-inf...

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Detalles Bibliográficos
Autores principales: Glemža, Justinas, Palenskis, Vilius, Geižutis, Andrejus, Čechavičius, Bronislovas, Butkutė, Renata, Pralgauskaitė, Sandra, Matukas, Jonas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6416598/
https://www.ncbi.nlm.nih.gov/pubmed/30813493
http://dx.doi.org/10.3390/ma12040673

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6416598/
https://www.ncbi.nlm.nih.gov/pubmed/30813493
http://dx.doi.org/10.3390/ma12040673

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