Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence

The InGaN/GaN multi-quantum wells (MQWs) are prepared at the same condition by metal-organic chemical vapor deposition (MOCVD) except the thickness of cap layers additionally grown on each InGaN well layer. The photoluminescence (PL) intensity of the thin cap layer sample is much stronger than that...

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Detalles Bibliográficos
Autores principales: Xing, Yao, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Chen, Ping, Yang, Jing, Liang, Feng, Liu, Shuangtao, Zhang, Liqun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6419640/
https://www.ncbi.nlm.nih.gov/pubmed/30874975
http://dx.doi.org/10.1186/s11671-019-2919-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6419640/
https://www.ncbi.nlm.nih.gov/pubmed/30874975
http://dx.doi.org/10.1186/s11671-019-2919-9

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