Substitutional and interstitial impurity p-type doping of thermoelectric Mg(2)Si: a theoretical study

The narrow-gap magnesium silicide semiconductor Mg(2)Si is a promising mid-temperature (600–900 K) thermoelectric material. It intrinsically possesses n-type conductivity, and n-type dopants are generally used for improving its thermoelectric performance; however, the synthesis of p-type Mg(2)Si is...

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Detalles Bibliográficos
Autores principales: Hirayama, Naomi, Iida, Tsutomu, Sakamoto, Mariko, Nishio, Keishi, Hamada, Noriaki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2019
Materias:
Focus on Energy Harvesting - Science, Technology, Application and Metrology
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6419642/
https://www.ncbi.nlm.nih.gov/pubmed/30891103
http://dx.doi.org/10.1080/14686996.2019.1580537

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6419642/
https://www.ncbi.nlm.nih.gov/pubmed/30891103
http://dx.doi.org/10.1080/14686996.2019.1580537

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