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Substitutional and interstitial impurity p-type doping of thermoelectric Mg(2)Si: a theoretical study
The narrow-gap magnesium silicide semiconductor Mg(2)Si is a promising mid-temperature (600–900 K) thermoelectric material. It intrinsically possesses n-type conductivity, and n-type dopants are generally used for improving its thermoelectric performance; however, the synthesis of p-type Mg(2)Si is...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Taylor & Francis
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6419642/ https://www.ncbi.nlm.nih.gov/pubmed/30891103 http://dx.doi.org/10.1080/14686996.2019.1580537 |