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Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2)-based Flexible Memristor with Short/Long-Term Synaptic Plasticity

Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characte...

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Autores principales: Wang, Tian-Yu, Meng, Jia-Lin, He, Zhen-Yu, Chen, Lin, Zhu, Hao, Sun, Qing-Qing, Ding, Shi-Jin, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6420527/
https://www.ncbi.nlm.nih.gov/pubmed/30877593
http://dx.doi.org/10.1186/s11671-019-2933-y
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author Wang, Tian-Yu
Meng, Jia-Lin
He, Zhen-Yu
Chen, Lin
Zhu, Hao
Sun, Qing-Qing
Ding, Shi-Jin
Zhang, David Wei
author_facet Wang, Tian-Yu
Meng, Jia-Lin
He, Zhen-Yu
Chen, Lin
Zhu, Hao
Sun, Qing-Qing
Ding, Shi-Jin
Zhang, David Wei
author_sort Wang, Tian-Yu
collection PubMed
description Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characteristics. With the formation and rupture of ions conductive filaments path, the conductance was modulated gradually. Under a series of pre-synaptic spikes, the device successfully emulated remarkable short-term plasticity, long-term plasticity, and forgetting behaviors. Therefore, memory and learning ability were integrated to the single flexible memristor, which are promising for the next-generation of artificial neuromorphic computing systems.
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spelling pubmed-64205272019-04-05 Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2)-based Flexible Memristor with Short/Long-Term Synaptic Plasticity Wang, Tian-Yu Meng, Jia-Lin He, Zhen-Yu Chen, Lin Zhu, Hao Sun, Qing-Qing Ding, Shi-Jin Zhang, David Wei Nanoscale Res Lett Nano Express Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characteristics. With the formation and rupture of ions conductive filaments path, the conductance was modulated gradually. Under a series of pre-synaptic spikes, the device successfully emulated remarkable short-term plasticity, long-term plasticity, and forgetting behaviors. Therefore, memory and learning ability were integrated to the single flexible memristor, which are promising for the next-generation of artificial neuromorphic computing systems. Springer US 2019-03-15 /pmc/articles/PMC6420527/ /pubmed/30877593 http://dx.doi.org/10.1186/s11671-019-2933-y Text en © The Author(s). 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Wang, Tian-Yu
Meng, Jia-Lin
He, Zhen-Yu
Chen, Lin
Zhu, Hao
Sun, Qing-Qing
Ding, Shi-Jin
Zhang, David Wei
Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2)-based Flexible Memristor with Short/Long-Term Synaptic Plasticity
title Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2)-based Flexible Memristor with Short/Long-Term Synaptic Plasticity
title_full Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2)-based Flexible Memristor with Short/Long-Term Synaptic Plasticity
title_fullStr Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2)-based Flexible Memristor with Short/Long-Term Synaptic Plasticity
title_full_unstemmed Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2)-based Flexible Memristor with Short/Long-Term Synaptic Plasticity
title_short Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2)-based Flexible Memristor with Short/Long-Term Synaptic Plasticity
title_sort atomic layer deposited hf(0.5)zr(0.5)o(2)-based flexible memristor with short/long-term synaptic plasticity
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6420527/
https://www.ncbi.nlm.nih.gov/pubmed/30877593
http://dx.doi.org/10.1186/s11671-019-2933-y
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