Extremely high-gain source-gated transistors

Despite being a fundamental electronic component for over 70 years, it is still possible to develop different transistor designs, including the addition of a diode-like Schottky source electrode to thin-film transistors. The discovery of a dependence of the source barrier height on the semiconductor...

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Detalles Bibliográficos
Autores principales: Zhang, Jiawei, Wilson, Joshua, Auton, Gregory, Wang, Yiming, Xu, Mingsheng, Xin, Qian, Song, Aimin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: National Academy of Sciences 2019
Materias:
Physical Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6421470/
https://www.ncbi.nlm.nih.gov/pubmed/30804190
http://dx.doi.org/10.1073/pnas.1820756116

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6421470/
https://www.ncbi.nlm.nih.gov/pubmed/30804190
http://dx.doi.org/10.1073/pnas.1820756116

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