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Extremely high-gain source-gated transistors
Despite being a fundamental electronic component for over 70 years, it is still possible to develop different transistor designs, including the addition of a diode-like Schottky source electrode to thin-film transistors. The discovery of a dependence of the source barrier height on the semiconductor...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
National Academy of Sciences
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6421470/ https://www.ncbi.nlm.nih.gov/pubmed/30804190 http://dx.doi.org/10.1073/pnas.1820756116 |