Flexible Robust and High‐Density FeRAM from Array of Organic Ferroelectric Nano‐Lamellae by Self‐Assembly

Ferroelectric memories are endowed with high data storage density by nanostructure designing, while the robustness is also impaired. For organic ferroelectrics favored by flexible memories, low Curie transition temperature limits their thermal stability. Herein, a ferroelectric random access memory...

Descripción completa

Detalles Bibliográficos
Autores principales: Guo, Mengfan, Jiang, Jianyong, Qian, Jianfeng, Liu, Chen, Ma, Jing, Nan, Ce‐Wen, Shen, Yang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6425439/
https://www.ncbi.nlm.nih.gov/pubmed/30937269
http://dx.doi.org/10.1002/advs.201801931

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6425439/
https://www.ncbi.nlm.nih.gov/pubmed/30937269
http://dx.doi.org/10.1002/advs.201801931

Ejemplares similares