Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al(2)O(3) Gate Dielectrics

A normally-off GaN double-implanted vertical MOSFET (DMOSFET) with an atomic layer deposition (ALD)-Al(2)O(3) gate dielectric film on a free-standing GaN substrate fabricated by triple ion implantation is presented. The DMOSFET was formed with Si ion implanted source regions in a Mg ion implanted p-...

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Detalles Bibliográficos
Autores principales: Yoshino, Michitaka, Ando, Yuto, Deki, Manato, Toyabe, Toru, Kuriyama, Kazuo, Honda, Yoshio, Nishimura, Tomoaki, Amano, Hiroshi, Kachi, Tetsu, Nakamura, Tohru
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6427114/
https://www.ncbi.nlm.nih.gov/pubmed/30813566
http://dx.doi.org/10.3390/ma12050689

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6427114/
https://www.ncbi.nlm.nih.gov/pubmed/30813566
http://dx.doi.org/10.3390/ma12050689

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