Impact of Oxygen Vacancy on the Photo-Electrical Properties of In(2)O(3)-Based Thin-Film Transistor by Doping Ga

In this study, amorphous indium gallium oxide thin-film transistors (IGO TFTs) were fabricated by co-sputtering. Three samples with different deposition powers of the In(2)O(3) target, namely, sample A with 50 W deposition power, sample B with 60 W deposition power, and sample C with 70 W deposition...

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Detalles Bibliográficos
Autores principales: Chen, Kuan-Yu, Yang, Chih-Chiang, Su, Yan-Kuin, Wang, Zi-Hao, Yu, Hsin-Chieh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6427162/
https://www.ncbi.nlm.nih.gov/pubmed/30836627
http://dx.doi.org/10.3390/ma12050737

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6427162/
https://www.ncbi.nlm.nih.gov/pubmed/30836627
http://dx.doi.org/10.3390/ma12050737

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