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Impact of Oxygen Vacancy on the Photo-Electrical Properties of In(2)O(3)-Based Thin-Film Transistor by Doping Ga
In this study, amorphous indium gallium oxide thin-film transistors (IGO TFTs) were fabricated by co-sputtering. Three samples with different deposition powers of the In(2)O(3) target, namely, sample A with 50 W deposition power, sample B with 60 W deposition power, and sample C with 70 W deposition...
Autores principales: | Chen, Kuan-Yu, Yang, Chih-Chiang, Su, Yan-Kuin, Wang, Zi-Hao, Yu, Hsin-Chieh |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6427162/ https://www.ncbi.nlm.nih.gov/pubmed/30836627 http://dx.doi.org/10.3390/ma12050737 |
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