GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate

The fabrication of a single pixel sensor, which is a fundamental element device for the fabrication of an array-type pixel sensor, requires an integration technique of a photodetector and transistor on a wafer. In conventional GaN-based ultraviolet (UV) imaging devices, a hybrid-type integration pro...

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Detalles Bibliográficos
Autores principales: Lee, Chang-Ju, Won, Chul-Ho, Lee, Jung-Hee, Hahm, Sung-Ho, Park, Hongsik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6427264/
https://www.ncbi.nlm.nih.gov/pubmed/30832229
http://dx.doi.org/10.3390/s19051051

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6427264/
https://www.ncbi.nlm.nih.gov/pubmed/30832229
http://dx.doi.org/10.3390/s19051051

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