Strain Engineering of Germanium Nanobeams by Electrostatic Actuation

Germanium (Ge) is a promising material for the development of a light source compatible with the silicon microfabrication technology, even though it is an indirect-bandgap material in its bulk form. Among various techniques suggested to boost the light emission efficiency of Ge, the strain induction...

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Detalles Bibliográficos
Autores principales: Ayan, Arman, Turkay, Deniz, Unlu, Buse, Naghinazhadahmadi, Parisa, Oliaei, Samad Nadimi Bavil, Boztug, Cicek, Yerci, Selcuk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6428825/
https://www.ncbi.nlm.nih.gov/pubmed/30899029
http://dx.doi.org/10.1038/s41598-019-41097-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6428825/
https://www.ncbi.nlm.nih.gov/pubmed/30899029
http://dx.doi.org/10.1038/s41598-019-41097-1

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