Cargando…
Strain Engineering of Germanium Nanobeams by Electrostatic Actuation
Germanium (Ge) is a promising material for the development of a light source compatible with the silicon microfabrication technology, even though it is an indirect-bandgap material in its bulk form. Among various techniques suggested to boost the light emission efficiency of Ge, the strain induction...
| Autores principales: | , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6428825/ https://www.ncbi.nlm.nih.gov/pubmed/30899029 http://dx.doi.org/10.1038/s41598-019-41097-1 |