Hydrogen-terminated diamond field-effect transistor with AlO(x) dielectric layer formed by autoxidation

Fabrication of hydrogen-terminated diamond (H-diamond) field-effect transistor (FET) with AlO(x) dielectric layer has been successfully carried out. The AlO(x) layer was formed by auto-oxidizing 6 nm Al film in the air at room temperature, and a FET without AlO(x) dielectric layer has also been fabr...

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Detalles Bibliográficos
Autores principales: Wang, Yan-Feng, Wang, Wei, Chang, Xiaohui, Zhang, Xiaofan, Fu, Jiao, Liu, Zhangcheng, Zhao, Dan, Shao, Guoqing, Fan, Shuwei, Bu, Renan, Zhang, Jingwen, Wang, Hong-Xing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6435749/
https://www.ncbi.nlm.nih.gov/pubmed/30914662
http://dx.doi.org/10.1038/s41598-019-41082-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6435749/
https://www.ncbi.nlm.nih.gov/pubmed/30914662
http://dx.doi.org/10.1038/s41598-019-41082-8

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