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Pressure‐Induced Formation of Quaternary Compound and In−N Distribution in InGaAsN Zincblende from Ab Initio Calculation
We present the effects of In−N distribution and high pressure on the zincblende phase (0–5 GPa) of In(x)Ga(1−x)As(0.963)N(0.037) (x=0.074, 0.111 and 0.148). Structural, electronic, and optical properties are analyzed, and it is found that non‐isotropic distribution of In−N (type C) possesses the min...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6438128/ https://www.ncbi.nlm.nih.gov/pubmed/30976480 http://dx.doi.org/10.1002/open.201900018 |