Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta(2)O(5)/TaO(x) Bi-Layer Structure

Bi-layer structure has been widely adopted to improve the reliability of the conductive bridge random access memory (CBRAM). In this work, we proposed a convenient and economical solution to achieve a Ta(2)O(5)/TaO(x) bi-layer structure by using a low-temperature annealing process. The addition of a...

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Detalles Bibliográficos
Autores principales: Yu, Jie, Xu, Xiaoxin, Gong, Tiancheng, Luo, Qing, Dong, Danian, Yuan, Peng, Tai, Lu, Yin, Jiahao, Zhu, Xi, Wu, Xiulong, Lv, Hangbing, Liu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6439017/
https://www.ncbi.nlm.nih.gov/pubmed/30923974
http://dx.doi.org/10.1186/s11671-019-2942-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6439017/
https://www.ncbi.nlm.nih.gov/pubmed/30923974
http://dx.doi.org/10.1186/s11671-019-2942-x

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