Heterostructure ReS(2)/GaAs Saturable Absorber Passively Q-Switched Nd:YVO(4) Laser

Heterostructure ReS(2)/GaAs was fabricated on a 110-μm (111) GaAs wafer by chemical vapor deposition method. Passively Q-switched Nd:YVO(4) laser was demonstrated by employing heterostructure ReS(2)/GaAs as a saturable absorber (SA). The shortest pulse width of 51.3 ns with a repetition rate of 452 ...

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Detalles Bibliográficos
Autores principales: Liu, Lijie, Chu, Hongwei, Zhang, Xiaodong, Pan, Han, Zhao, Shengzhi, Li, Dechun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6439101/
https://www.ncbi.nlm.nih.gov/pubmed/30923973
http://dx.doi.org/10.1186/s11671-019-2953-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6439101/
https://www.ncbi.nlm.nih.gov/pubmed/30923973
http://dx.doi.org/10.1186/s11671-019-2953-7

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