Heterostructure ReS(2)/GaAs Saturable Absorber Passively Q-Switched Nd:YVO(4) Laser

Heterostructure ReS(2)/GaAs was fabricated on a 110-μm (111) GaAs wafer by chemical vapor deposition method. Passively Q-switched Nd:YVO(4) laser was demonstrated by employing heterostructure ReS(2)/GaAs as a saturable absorber (SA). The shortest pulse width of 51.3 ns with a repetition rate of 452 ...

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Detalles Bibliográficos
Autores principales: Liu, Lijie, Chu, Hongwei, Zhang, Xiaodong, Pan, Han, Zhao, Shengzhi, Li, Dechun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6439101/
https://www.ncbi.nlm.nih.gov/pubmed/30923973
http://dx.doi.org/10.1186/s11671-019-2953-7
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author Liu, Lijie
Chu, Hongwei
Zhang, Xiaodong
Pan, Han
Zhao, Shengzhi
Li, Dechun
author_facet Liu, Lijie
Chu, Hongwei
Zhang, Xiaodong
Pan, Han
Zhao, Shengzhi
Li, Dechun
author_sort Liu, Lijie
collection PubMed
description Heterostructure ReS(2)/GaAs was fabricated on a 110-μm (111) GaAs wafer by chemical vapor deposition method. Passively Q-switched Nd:YVO(4) laser was demonstrated by employing heterostructure ReS(2)/GaAs as a saturable absorber (SA). The shortest pulse width of 51.3 ns with a repetition rate of 452 kHz was obtained, corresponding to the pulse energy of 465 nJ and the peak power of 9.1 W. In comparison with the ReS(2) Q-switched laser and the GaAs Q-switched laser, the heterostructer ReS(2)/GaAs Q-switched laser can generate shorter pulse duration and higher pulse energy.
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spelling pubmed-64391012019-04-15 Heterostructure ReS(2)/GaAs Saturable Absorber Passively Q-Switched Nd:YVO(4) Laser Liu, Lijie Chu, Hongwei Zhang, Xiaodong Pan, Han Zhao, Shengzhi Li, Dechun Nanoscale Res Lett Nano Express Heterostructure ReS(2)/GaAs was fabricated on a 110-μm (111) GaAs wafer by chemical vapor deposition method. Passively Q-switched Nd:YVO(4) laser was demonstrated by employing heterostructure ReS(2)/GaAs as a saturable absorber (SA). The shortest pulse width of 51.3 ns with a repetition rate of 452 kHz was obtained, corresponding to the pulse energy of 465 nJ and the peak power of 9.1 W. In comparison with the ReS(2) Q-switched laser and the GaAs Q-switched laser, the heterostructer ReS(2)/GaAs Q-switched laser can generate shorter pulse duration and higher pulse energy. Springer US 2019-03-29 /pmc/articles/PMC6439101/ /pubmed/30923973 http://dx.doi.org/10.1186/s11671-019-2953-7 Text en © The Author(s). 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Liu, Lijie
Chu, Hongwei
Zhang, Xiaodong
Pan, Han
Zhao, Shengzhi
Li, Dechun
Heterostructure ReS(2)/GaAs Saturable Absorber Passively Q-Switched Nd:YVO(4) Laser
title Heterostructure ReS(2)/GaAs Saturable Absorber Passively Q-Switched Nd:YVO(4) Laser
title_full Heterostructure ReS(2)/GaAs Saturable Absorber Passively Q-Switched Nd:YVO(4) Laser
title_fullStr Heterostructure ReS(2)/GaAs Saturable Absorber Passively Q-Switched Nd:YVO(4) Laser
title_full_unstemmed Heterostructure ReS(2)/GaAs Saturable Absorber Passively Q-Switched Nd:YVO(4) Laser
title_short Heterostructure ReS(2)/GaAs Saturable Absorber Passively Q-Switched Nd:YVO(4) Laser
title_sort heterostructure res(2)/gaas saturable absorber passively q-switched nd:yvo(4) laser
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6439101/
https://www.ncbi.nlm.nih.gov/pubmed/30923973
http://dx.doi.org/10.1186/s11671-019-2953-7
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