Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications

We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM) applications. The ferroelectric nature of the NEI laye...

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Detalles Bibliográficos
Autores principales: Peng, Yue, Han, Genquan, Xiao, Wenwu, Wu, Jibao, Liu, Yan, Zhang, Jincheng, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6443763/
https://www.ncbi.nlm.nih.gov/pubmed/30937641
http://dx.doi.org/10.1186/s11671-019-2943-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6443763/
https://www.ncbi.nlm.nih.gov/pubmed/30937641
http://dx.doi.org/10.1186/s11671-019-2943-9

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