Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications

We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM) applications. The ferroelectric nature of the NEI laye...

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Autores principales: Peng, Yue, Han, Genquan, Xiao, Wenwu, Wu, Jibao, Liu, Yan, Zhang, Jincheng, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6443763/
https://www.ncbi.nlm.nih.gov/pubmed/30937641
http://dx.doi.org/10.1186/s11671-019-2943-9
_version_ 1783407892283523072
author Peng, Yue
Han, Genquan
Xiao, Wenwu
Wu, Jibao
Liu, Yan
Zhang, Jincheng
Hao, Yue
author_facet Peng, Yue
Han, Genquan
Xiao, Wenwu
Wu, Jibao
Liu, Yan
Zhang, Jincheng
Hao, Yue
author_sort Peng, Yue
collection PubMed
description We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM) applications. The ferroelectric nature of the NEI layers comprising orthorhombic ZrO(2) nanocrystals embedded in amorphous Al(2)O(3) is proved by polarization voltage measurements, piezoresponse force microscopy, and electrical measurements. The temperature dependent performance and endurance behavior of a NEI negative capacitance FET (NCFET) are investigated. A FeFET with 3.6 nm thick FE/DE achieves a memory window larger than 1 V, paving a pathway for ultimate scaling of FE thickness to enable three-dimensional FeFETs with very small fin pitch.
format Online
Article
Text
id pubmed-6443763
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher Springer US
record_format MEDLINE/PubMed
spelling pubmed-64437632019-04-20 Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications Peng, Yue Han, Genquan Xiao, Wenwu Wu, Jibao Liu, Yan Zhang, Jincheng Hao, Yue Nanoscale Res Lett Nano Express We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM) applications. The ferroelectric nature of the NEI layers comprising orthorhombic ZrO(2) nanocrystals embedded in amorphous Al(2)O(3) is proved by polarization voltage measurements, piezoresponse force microscopy, and electrical measurements. The temperature dependent performance and endurance behavior of a NEI negative capacitance FET (NCFET) are investigated. A FeFET with 3.6 nm thick FE/DE achieves a memory window larger than 1 V, paving a pathway for ultimate scaling of FE thickness to enable three-dimensional FeFETs with very small fin pitch. Springer US 2019-04-01 /pmc/articles/PMC6443763/ /pubmed/30937641 http://dx.doi.org/10.1186/s11671-019-2943-9 Text en © The Author(s). 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Peng, Yue
Han, Genquan
Xiao, Wenwu
Wu, Jibao
Liu, Yan
Zhang, Jincheng
Hao, Yue
Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications
title Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications
title_full Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications
title_fullStr Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications
title_full_unstemmed Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications
title_short Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications
title_sort nanocrystal-embedded-insulator (nei) ferroelectric fets for negative capacitance device and non-volatile memory applications
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6443763/
https://www.ncbi.nlm.nih.gov/pubmed/30937641
http://dx.doi.org/10.1186/s11671-019-2943-9
work_keys_str_mv AT pengyue nanocrystalembeddedinsulatorneiferroelectricfetsfornegativecapacitancedeviceandnonvolatilememoryapplications
AT hangenquan nanocrystalembeddedinsulatorneiferroelectricfetsfornegativecapacitancedeviceandnonvolatilememoryapplications
AT xiaowenwu nanocrystalembeddedinsulatorneiferroelectricfetsfornegativecapacitancedeviceandnonvolatilememoryapplications
AT wujibao nanocrystalembeddedinsulatorneiferroelectricfetsfornegativecapacitancedeviceandnonvolatilememoryapplications
AT liuyan nanocrystalembeddedinsulatorneiferroelectricfetsfornegativecapacitancedeviceandnonvolatilememoryapplications
AT zhangjincheng nanocrystalembeddedinsulatorneiferroelectricfetsfornegativecapacitancedeviceandnonvolatilememoryapplications
AT haoyue nanocrystalembeddedinsulatorneiferroelectricfetsfornegativecapacitancedeviceandnonvolatilememoryapplications

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