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Scaling behavior of nanoimprint and nanoprinting lithography for producing nanostructures of molybdenum disulfide

Top-down lithography techniques are needed for manufacturing uniform device structures based on emerging 2D-layered materials. Mechanical exfoliation approaches based on nanoimprint and nanoprint principles are capable of producing ordered arrays of multilayer transition metal dichalcogenide microst...

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Autores principales: Chen, Mikai, Rokni, Hossein, Lu, Wei, Liang, Xiaogan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6444983/
https://www.ncbi.nlm.nih.gov/pubmed/31057879
http://dx.doi.org/10.1038/micronano.2017.53
_version_ 1783408113867554816
author Chen, Mikai
Rokni, Hossein
Lu, Wei
Liang, Xiaogan
author_facet Chen, Mikai
Rokni, Hossein
Lu, Wei
Liang, Xiaogan
author_sort Chen, Mikai
collection PubMed
description Top-down lithography techniques are needed for manufacturing uniform device structures based on emerging 2D-layered materials. Mechanical exfoliation approaches based on nanoimprint and nanoprint principles are capable of producing ordered arrays of multilayer transition metal dichalcogenide microstructures with a high uniformity of feature dimensions. In this study, we present a study on the applicability of nanoimprint-assisted shear exfoliation for generating ultrathin monolayer and few-layer MoS(2) structures as well as the critical limits of feature dimensions produced via such nanoimprint and nanoprint-based processes. In particular, this work shows that give a lateral feature size of MoS(2) structures that are pre-patterned on a bulk stamp, there exists a critical thickness or aspect ratio value, below which the exfoliated layered structures exhibit major defects. To exfoliate a high-quality, uniform monolayer or few-layer structures, the characteristic lateral feature sizes of such structures need to be in the sub-100 nm regimes. In addition, the exfoliated MoS(2) flakes of critical thicknesses exhibit prominent interlayer twisting features on their cleaved surfaces. Field-effect transistors made from these MoS(2) flakes exhibit multiple (or quasi-analog-tunable) charge memory states. This work advances the knowledge regarding the limitations and application scope of nanoimprint and nanoprint processes in manufacturing nano/microstructures based on layered materials and provides a method for producing multi-bit charge memory devices.
format Online
Article
Text
id pubmed-6444983
institution National Center for Biotechnology Information
language English
publishDate 2017
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-64449832019-05-03 Scaling behavior of nanoimprint and nanoprinting lithography for producing nanostructures of molybdenum disulfide Chen, Mikai Rokni, Hossein Lu, Wei Liang, Xiaogan Microsyst Nanoeng Article Top-down lithography techniques are needed for manufacturing uniform device structures based on emerging 2D-layered materials. Mechanical exfoliation approaches based on nanoimprint and nanoprint principles are capable of producing ordered arrays of multilayer transition metal dichalcogenide microstructures with a high uniformity of feature dimensions. In this study, we present a study on the applicability of nanoimprint-assisted shear exfoliation for generating ultrathin monolayer and few-layer MoS(2) structures as well as the critical limits of feature dimensions produced via such nanoimprint and nanoprint-based processes. In particular, this work shows that give a lateral feature size of MoS(2) structures that are pre-patterned on a bulk stamp, there exists a critical thickness or aspect ratio value, below which the exfoliated layered structures exhibit major defects. To exfoliate a high-quality, uniform monolayer or few-layer structures, the characteristic lateral feature sizes of such structures need to be in the sub-100 nm regimes. In addition, the exfoliated MoS(2) flakes of critical thicknesses exhibit prominent interlayer twisting features on their cleaved surfaces. Field-effect transistors made from these MoS(2) flakes exhibit multiple (or quasi-analog-tunable) charge memory states. This work advances the knowledge regarding the limitations and application scope of nanoimprint and nanoprint processes in manufacturing nano/microstructures based on layered materials and provides a method for producing multi-bit charge memory devices. Nature Publishing Group 2017-09-11 /pmc/articles/PMC6444983/ /pubmed/31057879 http://dx.doi.org/10.1038/micronano.2017.53 Text en Copyright © 2017 The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Chen, Mikai
Rokni, Hossein
Lu, Wei
Liang, Xiaogan
Scaling behavior of nanoimprint and nanoprinting lithography for producing nanostructures of molybdenum disulfide
title Scaling behavior of nanoimprint and nanoprinting lithography for producing nanostructures of molybdenum disulfide
title_full Scaling behavior of nanoimprint and nanoprinting lithography for producing nanostructures of molybdenum disulfide
title_fullStr Scaling behavior of nanoimprint and nanoprinting lithography for producing nanostructures of molybdenum disulfide
title_full_unstemmed Scaling behavior of nanoimprint and nanoprinting lithography for producing nanostructures of molybdenum disulfide
title_short Scaling behavior of nanoimprint and nanoprinting lithography for producing nanostructures of molybdenum disulfide
title_sort scaling behavior of nanoimprint and nanoprinting lithography for producing nanostructures of molybdenum disulfide
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6444983/
https://www.ncbi.nlm.nih.gov/pubmed/31057879
http://dx.doi.org/10.1038/micronano.2017.53
work_keys_str_mv AT chenmikai scalingbehaviorofnanoimprintandnanoprintinglithographyforproducingnanostructuresofmolybdenumdisulfide
AT roknihossein scalingbehaviorofnanoimprintandnanoprintinglithographyforproducingnanostructuresofmolybdenumdisulfide
AT luwei scalingbehaviorofnanoimprintandnanoprintinglithographyforproducingnanostructuresofmolybdenumdisulfide
AT liangxiaogan scalingbehaviorofnanoimprintandnanoprintinglithographyforproducingnanostructuresofmolybdenumdisulfide