High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al(2)O(3) Dielectric

Electrical characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) are compared by using O(2) plasma-enhanced atomic layer deposition Al(2)O(3) dielectrics at different temperatures. High-performance a-IGZO TFTs are demonstrated successfully with an Al(2)O(3) dielectric deposit...

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Detalles Bibliográficos
Autores principales: Shao, Yan, Wu, Xiaohan, Zhang, Mei-Na, Liu, Wen-Jun, Ding, Shi-Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6445835/
https://www.ncbi.nlm.nih.gov/pubmed/30941527
http://dx.doi.org/10.1186/s11671-019-2959-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6445835/
https://www.ncbi.nlm.nih.gov/pubmed/30941527
http://dx.doi.org/10.1186/s11671-019-2959-1

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