Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors

For newly developed semiconductors, obtaining high‐performance transistors and identifying carrier mobility have been hot and important issues. Here, large‐area fabrications and thorough analysis of InGaZnO transistors with enhanced current by simple encapsulations are reported. The enhancement in t...

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Detalles Bibliográficos
Autores principales: Chen, Changdong, Yang, Bo‐Ru, Li, Gongtan, Zhou, Hang, Huang, Bolong, Wu, Qian, Zhan, Runze, Noh, Yong‐Young, Minari, Takeo, Zhang, Shengdong, Deng, Shaozhi, Sirringhaus, Henning, Liu, Chuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6446609/
https://www.ncbi.nlm.nih.gov/pubmed/30989018
http://dx.doi.org/10.1002/advs.201801189

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6446609/
https://www.ncbi.nlm.nih.gov/pubmed/30989018
http://dx.doi.org/10.1002/advs.201801189

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