Wafer-scale and selective-area growth of high-quality hexagonal boron nitride on Ni(111) by metal-organic chemical vapor deposition

We demonstrate wafer-scale growth of high-quality hexagonal boron nitride (h-BN) film on Ni(111) template using metal-organic chemical vapor deposition (MOCVD). Compared with inert sapphire substrate, the catalytic Ni(111) template facilitates a fast growth of high-quality h-BN film at the relativel...

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Detalles Bibliográficos
Autores principales: Jeong, Hokyeong, Kim, Dong Yeong, Kim, Jaewon, Moon, Seokho, Han, Nam, Lee, Seung Hee, Okello, Odongo Francis Ngome, Song, Kyung, Choi, Si-Young, Kim, Jong Kyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6450880/
https://www.ncbi.nlm.nih.gov/pubmed/30952939
http://dx.doi.org/10.1038/s41598-019-42236-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6450880/
https://www.ncbi.nlm.nih.gov/pubmed/30952939
http://dx.doi.org/10.1038/s41598-019-42236-4

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