Ge pMOSFETs with GeO(x) Passivation Formed by Ozone and Plasma Post Oxidation

A comparison study on electrical performance of Ge pMOSFETs with a GeO(x) passivation layer formed by ozone post oxidation (OPO) and plasma post oxidation (PPO) is performed. PPO and OPO were carried out on an Al(2)O(3)/n-Ge (001) substrate followed by a 5-nm HfO(2) gate dielectric in situ deposited...

Descripción completa

Detalles Bibliográficos
Autores principales: Xu, Yang, Han, Genquan, Liu, Huan, Wang, Yibo, Liu, Yan, Ao, Jinping, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6450985/
https://www.ncbi.nlm.nih.gov/pubmed/30953229
http://dx.doi.org/10.1186/s11671-019-2958-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6450985/
https://www.ncbi.nlm.nih.gov/pubmed/30953229
http://dx.doi.org/10.1186/s11671-019-2958-2

Ejemplares similares