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Ge pMOSFETs with GeO(x) Passivation Formed by Ozone and Plasma Post Oxidation

A comparison study on electrical performance of Ge pMOSFETs with a GeO(x) passivation layer formed by ozone post oxidation (OPO) and plasma post oxidation (PPO) is performed. PPO and OPO were carried out on an Al(2)O(3)/n-Ge (001) substrate followed by a 5-nm HfO(2) gate dielectric in situ deposited...

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Detalles Bibliográficos
Autores principales:	Xu, Yang, Han, Genquan, Liu, Huan, Wang, Yibo, Liu, Yan, Ao, Jinping, Hao, Yue
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2019
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6450985/ https://www.ncbi.nlm.nih.gov/pubmed/30953229 http://dx.doi.org/10.1186/s11671-019-2958-2

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