On the Baliga’s Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate

A novel enhancement-mode vertical GaN field effect transistor (FET) with 2DEG for reducing the on-state resistance (R(ON)) and substrate pattern (SP) for enhancing the breakdown voltage (BV) is proposed in this work. By deliberately designing the width and height of the SP, the high concentrated ele...

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Detalles Bibliográficos
Autores principales: Wang, Zeheng, Wang, Zirui, Zhang, Zhenwei, Yang, Di, Yao, Yuanzhe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6458231/
https://www.ncbi.nlm.nih.gov/pubmed/30972597
http://dx.doi.org/10.1186/s11671-019-2960-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6458231/
https://www.ncbi.nlm.nih.gov/pubmed/30972597
http://dx.doi.org/10.1186/s11671-019-2960-8

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