Design and analysis of IGZO thin film transistor for AMOLED pixel circuit using double-gate tri active layer channel

In this research work, Amorphous Indium–Gallium–Zinc–Oxide (α-IGZO) thin-film transistor consisting of Tri-Active Layer (TAL) channel have been designed in a double-gate structure. The electrical performance of the novel device structure has been analyzed with its output and transfer characteristics...

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Detalles Bibliográficos
Autores principales: Dargar, Shashi K., Srivastava, Viranjay M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6458471/
https://www.ncbi.nlm.nih.gov/pubmed/31008392
http://dx.doi.org/10.1016/j.heliyon.2019.e01452

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6458471/
https://www.ncbi.nlm.nih.gov/pubmed/31008392
http://dx.doi.org/10.1016/j.heliyon.2019.e01452

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