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Design and analysis of IGZO thin film transistor for AMOLED pixel circuit using double-gate tri active layer channel
In this research work, Amorphous Indium–Gallium–Zinc–Oxide (α-IGZO) thin-film transistor consisting of Tri-Active Layer (TAL) channel have been designed in a double-gate structure. The electrical performance of the novel device structure has been analyzed with its output and transfer characteristics...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Elsevier
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6458471/ https://www.ncbi.nlm.nih.gov/pubmed/31008392 http://dx.doi.org/10.1016/j.heliyon.2019.e01452 |