All Nonmetal Resistive Random Access Memory

Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM dev...

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Detalles Bibliográficos
Autores principales: Yen, Te Jui, Gismatulin, Andrei, Volodin, Vladimir, Gritsenko, Vladimir, Chin, Albert
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6467915/
https://www.ncbi.nlm.nih.gov/pubmed/30992533
http://dx.doi.org/10.1038/s41598-019-42706-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6467915/
https://www.ncbi.nlm.nih.gov/pubmed/30992533
http://dx.doi.org/10.1038/s41598-019-42706-9

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