Improved Ferroelectric Performance of Mg-Doped LiNbO(3) Films by an Ideal Atomic Layer Deposited Al(2)O(3) Tunnel Switch Layer

Bilayer structures composed of 5% Mg-doped LiNbO(3) single-crystal films and ultrathin Al(2)O(3) layers with thickness ranging from 2 to 6 nm have been fabricated by using ion slicing technique combined with atomic layer deposition method. The transient domain switching current measurement results r...

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Detalles Bibliográficos
Autores principales: Zhang, Yan, Ren, Qing Hua, Chai, Xiao Jie, Jiang, Jun, Yang, Jian Guo, Jiang, An Quan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6468035/
https://www.ncbi.nlm.nih.gov/pubmed/30993547
http://dx.doi.org/10.1186/s11671-019-2970-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6468035/
https://www.ncbi.nlm.nih.gov/pubmed/30993547
http://dx.doi.org/10.1186/s11671-019-2970-6

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