CH(4) Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films

Suppression of carbon contamination in GaN films grown using metalorganic vapor phase epitaxy (MOVPE) is a crucial issue in its application to high power and high frequency electronic devices. To know how to reduce the C concentration in the films, a sequential analysis based on first principles cal...

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Detalles Bibliográficos
Autores principales: Kusaba, Akira, Li, Guanchen, Kempisty, Pawel, von Spakovsky, Michael R., Kangawa, Yoshihiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6470845/
https://www.ncbi.nlm.nih.gov/pubmed/30909584
http://dx.doi.org/10.3390/ma12060972

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6470845/
https://www.ncbi.nlm.nih.gov/pubmed/30909584
http://dx.doi.org/10.3390/ma12060972

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