High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al(2)O(3) Gate Dielectric

In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al(2)O(3) (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing patt...

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Detalles Bibliográficos
Autores principales: Choi, Seungbeom, Kim, Kyung-Tae, Park, Sung Kyu, Kim, Yong-Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6472027/
https://www.ncbi.nlm.nih.gov/pubmed/30871272
http://dx.doi.org/10.3390/ma12060852

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6472027/
https://www.ncbi.nlm.nih.gov/pubmed/30871272
http://dx.doi.org/10.3390/ma12060852

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