AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature

In this study, InAlN was grown on glass substrates using pulsed sputtering deposition (PSD) at room temperature (RT) and was applied to thin-film transistors (TFTs). The surface flatness of the InAIN films was improved by reducing the growth temperature from 350 °C to RT. Further, the electron mobil...

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Detalles Bibliográficos
Autores principales: Nakamura, Kyohei, Kobayashi, Atsushi, Ueno, Kohei, Ohta, Jitsuo, Fujioka, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6472516/
https://www.ncbi.nlm.nih.gov/pubmed/31000767
http://dx.doi.org/10.1038/s41598-019-42822-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6472516/
https://www.ncbi.nlm.nih.gov/pubmed/31000767
http://dx.doi.org/10.1038/s41598-019-42822-6

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