Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures

In GaN-based high electron mobility transistors (HEMTs), the fast emission of longitudinal optical (LO) phonons can result in the formation of hot spots near the gate region where high electric fields produce hot electrons. In this work, we investigate the probability of phonon emission as a functio...

Descripción completa

Detalles Bibliográficos
Autores principales: Mohamed, Ahmed, Park, Kihoon, Bayram, Can, Dutta, Mitra, Stroscio, Michael
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2019
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6472874/
https://www.ncbi.nlm.nih.gov/pubmed/30998702
http://dx.doi.org/10.1371/journal.pone.0214971

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6472874/
https://www.ncbi.nlm.nih.gov/pubmed/30998702
http://dx.doi.org/10.1371/journal.pone.0214971

Ejemplares similares