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Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures

In GaN-based high electron mobility transistors (HEMTs), the fast emission of longitudinal optical (LO) phonons can result in the formation of hot spots near the gate region where high electric fields produce hot electrons. In this work, we investigate the probability of phonon emission as a functio...

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Detalles Bibliográficos
Autores principales: Mohamed, Ahmed, Park, Kihoon, Bayram, Can, Dutta, Mitra, Stroscio, Michael
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6472874/
https://www.ncbi.nlm.nih.gov/pubmed/30998702
http://dx.doi.org/10.1371/journal.pone.0214971
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author Mohamed, Ahmed
Park, Kihoon
Bayram, Can
Dutta, Mitra
Stroscio, Michael
author_facet Mohamed, Ahmed
Park, Kihoon
Bayram, Can
Dutta, Mitra
Stroscio, Michael
author_sort Mohamed, Ahmed
collection PubMed
description In GaN-based high electron mobility transistors (HEMTs), the fast emission of longitudinal optical (LO) phonons can result in the formation of hot spots near the gate region where high electric fields produce hot electrons. In this work, we investigate the probability of phonon emission as a function of electron energy for confined and interface (IF) phonon modes for wurtzite GaN/InGaN/GaN heterostructures. Hot electrons radiate optical phonons which decay, anharmonically, into acoustic phonons that are essentially heat carriers. Herein, phonon engineering concepts are introduced which facilitate thermal management through the production of polar optical phonons. Some of the electrons near a semiconductor gate which manifests a strong electric field, are accelerated and the resulting hot electrons will produce confined and interface modes when the electrons are incident on a suitably-placed quantum well. This paper focuses on the production of confined and interface phonons. It is shown that interface modes may be preferentially produced which lead to elongated, lower-temperature hot spots.
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spelling pubmed-64728742019-05-03 Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures Mohamed, Ahmed Park, Kihoon Bayram, Can Dutta, Mitra Stroscio, Michael PLoS One Research Article In GaN-based high electron mobility transistors (HEMTs), the fast emission of longitudinal optical (LO) phonons can result in the formation of hot spots near the gate region where high electric fields produce hot electrons. In this work, we investigate the probability of phonon emission as a function of electron energy for confined and interface (IF) phonon modes for wurtzite GaN/InGaN/GaN heterostructures. Hot electrons radiate optical phonons which decay, anharmonically, into acoustic phonons that are essentially heat carriers. Herein, phonon engineering concepts are introduced which facilitate thermal management through the production of polar optical phonons. Some of the electrons near a semiconductor gate which manifests a strong electric field, are accelerated and the resulting hot electrons will produce confined and interface modes when the electrons are incident on a suitably-placed quantum well. This paper focuses on the production of confined and interface phonons. It is shown that interface modes may be preferentially produced which lead to elongated, lower-temperature hot spots. Public Library of Science 2019-04-18 /pmc/articles/PMC6472874/ /pubmed/30998702 http://dx.doi.org/10.1371/journal.pone.0214971 Text en © 2019 Mohamed et al http://creativecommons.org/licenses/by/4.0/ This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) , which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
spellingShingle Research Article
Mohamed, Ahmed
Park, Kihoon
Bayram, Can
Dutta, Mitra
Stroscio, Michael
Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures
title Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures
title_full Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures
title_fullStr Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures
title_full_unstemmed Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures
title_short Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures
title_sort confined and interface optical phonon emission in gan/ingan double barrier quantum well heterostructures
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6472874/
https://www.ncbi.nlm.nih.gov/pubmed/30998702
http://dx.doi.org/10.1371/journal.pone.0214971
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