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Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures

This work reports on the role of structure and composition on the determination of the performances of p-type SnO(x) TFTs with a bottom gate configuration deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (O(...

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Autores principales: Barros, Raquel, Saji, Kachirayil J., Waerenborgh, João C., Barquinha, Pedro, Pereira, Luís, Carlos, Emanuel, Martins, Rodrigo, Fortunato, Elvira
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6473352/
https://www.ncbi.nlm.nih.gov/pubmed/30823629
http://dx.doi.org/10.3390/nano9030320
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author Barros, Raquel
Saji, Kachirayil J.
Waerenborgh, João C.
Barquinha, Pedro
Pereira, Luís
Carlos, Emanuel
Martins, Rodrigo
Fortunato, Elvira
author_facet Barros, Raquel
Saji, Kachirayil J.
Waerenborgh, João C.
Barquinha, Pedro
Pereira, Luís
Carlos, Emanuel
Martins, Rodrigo
Fortunato, Elvira
author_sort Barros, Raquel
collection PubMed
description This work reports on the role of structure and composition on the determination of the performances of p-type SnO(x) TFTs with a bottom gate configuration deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (O(pp)) between 0% and 20% but where the p-type conduction was only observed between in a narrow window, from 2.8% to 3.8%. The role of structure and composition were evaluated by XRD and Mössbauer spectroscopic studies that allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used to produce p-type TFTs with saturation mobility of 4.6 cm(2) V(−1) s(−1) and on-off ratio above 7 × 10(4), operating at the enhancement mode with a saturation voltage of −10 V. Moreover, a brief overview is also presented concerning the present state of the existing developments in processing SnO(x) TFTs with different methods and using different device configurations.
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spelling pubmed-64733522019-05-03 Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures Barros, Raquel Saji, Kachirayil J. Waerenborgh, João C. Barquinha, Pedro Pereira, Luís Carlos, Emanuel Martins, Rodrigo Fortunato, Elvira Nanomaterials (Basel) Article This work reports on the role of structure and composition on the determination of the performances of p-type SnO(x) TFTs with a bottom gate configuration deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (O(pp)) between 0% and 20% but where the p-type conduction was only observed between in a narrow window, from 2.8% to 3.8%. The role of structure and composition were evaluated by XRD and Mössbauer spectroscopic studies that allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used to produce p-type TFTs with saturation mobility of 4.6 cm(2) V(−1) s(−1) and on-off ratio above 7 × 10(4), operating at the enhancement mode with a saturation voltage of −10 V. Moreover, a brief overview is also presented concerning the present state of the existing developments in processing SnO(x) TFTs with different methods and using different device configurations. MDPI 2019-03-01 /pmc/articles/PMC6473352/ /pubmed/30823629 http://dx.doi.org/10.3390/nano9030320 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Barros, Raquel
Saji, Kachirayil J.
Waerenborgh, João C.
Barquinha, Pedro
Pereira, Luís
Carlos, Emanuel
Martins, Rodrigo
Fortunato, Elvira
Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures
title Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures
title_full Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures
title_fullStr Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures
title_full_unstemmed Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures
title_short Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures
title_sort role of structure and composition on the performances of p-type tin oxide thin-film transistors processed at low-temperatures
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6473352/
https://www.ncbi.nlm.nih.gov/pubmed/30823629
http://dx.doi.org/10.3390/nano9030320
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