Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC

Strains in graphene play a significant role in graphene-based electronics, but many aspects of the grain boundary effects on strained graphene remain unclear. Here, the relationship between grain boundary and strain property of graphene grown by chemical vapor deposition (CVD) on the C-face of SiC s...

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Detalles Bibliográficos
Autores principales: Chong, Laiyuan, Guo, Hui, Zhang, Yuming, Hu, Yanfei, Zhang, Yimen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6473967/
https://www.ncbi.nlm.nih.gov/pubmed/30841583
http://dx.doi.org/10.3390/nano9030372

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6473967/
https://www.ncbi.nlm.nih.gov/pubmed/30841583
http://dx.doi.org/10.3390/nano9030372

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