Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC

Strains in graphene play a significant role in graphene-based electronics, but many aspects of the grain boundary effects on strained graphene remain unclear. Here, the relationship between grain boundary and strain property of graphene grown by chemical vapor deposition (CVD) on the C-face of SiC s...

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Autores principales: Chong, Laiyuan, Guo, Hui, Zhang, Yuming, Hu, Yanfei, Zhang, Yimen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6473967/
https://www.ncbi.nlm.nih.gov/pubmed/30841583
http://dx.doi.org/10.3390/nano9030372
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author Chong, Laiyuan
Guo, Hui
Zhang, Yuming
Hu, Yanfei
Zhang, Yimen
author_facet Chong, Laiyuan
Guo, Hui
Zhang, Yuming
Hu, Yanfei
Zhang, Yimen
author_sort Chong, Laiyuan
collection PubMed
description Strains in graphene play a significant role in graphene-based electronics, but many aspects of the grain boundary effects on strained graphene remain unclear. Here, the relationship between grain boundary and strain property of graphene grown by chemical vapor deposition (CVD) on the C-face of SiC substrate has been investigated by Raman spectroscopy. It is shown that abundant boundary-like defects exist in the graphene film and the blue-shifted 2D-band frequency, which results from compressive strain in graphene film, shifts downward linearly as 1/L(a) increases. Strain relaxation caused by grain boundary diffusion is considered to be the reason and the mechanism is analyzed in detail.
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spelling pubmed-64739672019-05-03 Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC Chong, Laiyuan Guo, Hui Zhang, Yuming Hu, Yanfei Zhang, Yimen Nanomaterials (Basel) Article Strains in graphene play a significant role in graphene-based electronics, but many aspects of the grain boundary effects on strained graphene remain unclear. Here, the relationship between grain boundary and strain property of graphene grown by chemical vapor deposition (CVD) on the C-face of SiC substrate has been investigated by Raman spectroscopy. It is shown that abundant boundary-like defects exist in the graphene film and the blue-shifted 2D-band frequency, which results from compressive strain in graphene film, shifts downward linearly as 1/L(a) increases. Strain relaxation caused by grain boundary diffusion is considered to be the reason and the mechanism is analyzed in detail. MDPI 2019-03-05 /pmc/articles/PMC6473967/ /pubmed/30841583 http://dx.doi.org/10.3390/nano9030372 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Chong, Laiyuan
Guo, Hui
Zhang, Yuming
Hu, Yanfei
Zhang, Yimen
Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC
title Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC
title_full Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC
title_fullStr Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC
title_full_unstemmed Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC
title_short Raman Study of Strain Relaxation from Grain Boundaries in Epitaxial Graphene Grown by Chemical Vapor Deposition on SiC
title_sort raman study of strain relaxation from grain boundaries in epitaxial graphene grown by chemical vapor deposition on sic
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6473967/
https://www.ncbi.nlm.nih.gov/pubmed/30841583
http://dx.doi.org/10.3390/nano9030372
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