A HfO(2)/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation

Volatile programmable metallization cell is a promising threshold switching selector with excellent characteristics and simple structures. However, the large variation of threshold voltage is a major problem for practical application. In this work, we propose a dual-layer structure to increase selec...

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Detalles Bibliográficos
Autores principales: Song, Bing, Cao, Rongrong, Xu, Hui, Liu, Sen, Liu, Haijun, Li, Qingjiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6474026/
https://www.ncbi.nlm.nih.gov/pubmed/30862000
http://dx.doi.org/10.3390/nano9030408

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6474026/
https://www.ncbi.nlm.nih.gov/pubmed/30862000
http://dx.doi.org/10.3390/nano9030408

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