A HfO(2)/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation

Volatile programmable metallization cell is a promising threshold switching selector with excellent characteristics and simple structures. However, the large variation of threshold voltage is a major problem for practical application. In this work, we propose a dual-layer structure to increase selec...

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Detalles Bibliográficos
Autores principales: Song, Bing, Cao, Rongrong, Xu, Hui, Liu, Sen, Liu, Haijun, Li, Qingjiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6474026/
https://www.ncbi.nlm.nih.gov/pubmed/30862000
http://dx.doi.org/10.3390/nano9030408
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author Song, Bing
Cao, Rongrong
Xu, Hui
Liu, Sen
Liu, Haijun
Li, Qingjiang
author_facet Song, Bing
Cao, Rongrong
Xu, Hui
Liu, Sen
Liu, Haijun
Li, Qingjiang
author_sort Song, Bing
collection PubMed
description Volatile programmable metallization cell is a promising threshold switching selector with excellent characteristics and simple structures. However, the large variation of threshold voltage is a major problem for practical application. In this work, we propose a dual-layer structure to increase selectivity and improve the threshold voltage variation. Compared to single-layer devices, this dual-layer device exhibits higher selectivity (>10(7)) and better threshold voltage uniformity with less than 5% fluctuation during 200 DC switching. The improvement is attributed to good control on the location of the filament formation and rupture after introducing a HfO(2) layer. It is deduced that a major factor consists of the difference of Ag ions mobility between SiTe and HfO(2) due to the grain boundary quantity.
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spelling pubmed-64740262019-05-03 A HfO(2)/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation Song, Bing Cao, Rongrong Xu, Hui Liu, Sen Liu, Haijun Li, Qingjiang Nanomaterials (Basel) Communication Volatile programmable metallization cell is a promising threshold switching selector with excellent characteristics and simple structures. However, the large variation of threshold voltage is a major problem for practical application. In this work, we propose a dual-layer structure to increase selectivity and improve the threshold voltage variation. Compared to single-layer devices, this dual-layer device exhibits higher selectivity (>10(7)) and better threshold voltage uniformity with less than 5% fluctuation during 200 DC switching. The improvement is attributed to good control on the location of the filament formation and rupture after introducing a HfO(2) layer. It is deduced that a major factor consists of the difference of Ag ions mobility between SiTe and HfO(2) due to the grain boundary quantity. MDPI 2019-03-11 /pmc/articles/PMC6474026/ /pubmed/30862000 http://dx.doi.org/10.3390/nano9030408 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Communication
Song, Bing
Cao, Rongrong
Xu, Hui
Liu, Sen
Liu, Haijun
Li, Qingjiang
A HfO(2)/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation
title A HfO(2)/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation
title_full A HfO(2)/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation
title_fullStr A HfO(2)/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation
title_full_unstemmed A HfO(2)/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation
title_short A HfO(2)/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation
title_sort hfo(2)/site based dual-layer selector device with minor threshold voltage variation
topic Communication
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6474026/
https://www.ncbi.nlm.nih.gov/pubmed/30862000
http://dx.doi.org/10.3390/nano9030408
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