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A HfO(2)/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation
Volatile programmable metallization cell is a promising threshold switching selector with excellent characteristics and simple structures. However, the large variation of threshold voltage is a major problem for practical application. In this work, we propose a dual-layer structure to increase selec...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6474026/ https://www.ncbi.nlm.nih.gov/pubmed/30862000 http://dx.doi.org/10.3390/nano9030408 |