Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes

We demonstrated that the tetramethylammonium hydroxide (TMAH) solution possesses different etching abilities to the chip sidewalls with different orientations because the orientation of chip sidewall determines the exposed crystallographic plane of gallium nitride (GaN) and these crystallographic pl...

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Detalles Bibliográficos
Autores principales: Wan, Hui, Tang, Bin, Li, Ning, Zhou, Shengjun, Gui, Chengqun, Liu, Sheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6474137/
https://www.ncbi.nlm.nih.gov/pubmed/30841511
http://dx.doi.org/10.3390/nano9030365

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6474137/
https://www.ncbi.nlm.nih.gov/pubmed/30841511
http://dx.doi.org/10.3390/nano9030365

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