Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength

An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investigated by photocurrent generation in the telecommunication range. The photocurrent is explored at room temperature as a function of the wavelength by using a supercontinuum laser source working in the μ...

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Detalles Bibliográficos
Autores principales: Celebrano, Michele, Ghirardini, Lavinia, Finazzi, Marco, Ferrari, Giorgio, Chiba, Yuki, Abdelghafar, Ayman, Yano, Maasa, Shinada, Takahiro, Tanii, Takashi, Prati, Enrico
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6474141/
https://www.ncbi.nlm.nih.gov/pubmed/30862111
http://dx.doi.org/10.3390/nano9030416

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6474141/
https://www.ncbi.nlm.nih.gov/pubmed/30862111
http://dx.doi.org/10.3390/nano9030416

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