Boron–oxygen complex yields n-type surface layer in semiconducting diamond

Diamond is a wide-bandgap semiconductor possessing exceptional physical and chemical properties with the potential to miniaturize high-power electronics. Whereas boron-doped diamond (BDD) is a well-known p-type semiconductor, fabrication of practical diamond-based electronic devices awaits developme...

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Detalles Bibliográficos
Autores principales: Liu, Xiaobing, Chen, Xin, Singh, David J., Stern, Richard A., Wu, Jinsong, Petitgirard, Sylvain, Bina, Craig R., Jacobsen, Steven D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: National Academy of Sciences 2019
Materias:
PNAS Plus
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6475370/
https://www.ncbi.nlm.nih.gov/pubmed/30936308
http://dx.doi.org/10.1073/pnas.1821612116

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6475370/
https://www.ncbi.nlm.nih.gov/pubmed/30936308
http://dx.doi.org/10.1073/pnas.1821612116

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